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RSY160P05
Transistors
4V Drive Pch MOSFET
RSY160P05
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TCPT
(2)
Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Same land pattern as CPT3 (D-PAK).
(1) (3)
Application Switching
Packaging specifications
Package Type RSY160P05 Code Basic ordering unit (pieces) Taping TL 2500
Equivalent circuit
1
2
(1)
(2)
(3)
(1) Gate (2) Drain (3) Source
1 ESD PROTECTION DIODE 2 BODY DIODE
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits -45 20 16 32 -16 -32 20 150 -55 to +150 Unit V V A A A A W C C
Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 Tc=25C
Thermal resistance
Parameter Channel to ambient
Tc=25C
Symbol Rth (ch-c)
Limits 6.25
Unit C / W
1/5
RSY160P05
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS -45 Zero gate voltage drain current - IDSS Gate threshold voltage VGS (th) -1.0 - Static drain-source on-state RDS (on) - resistance - Yfs 8.5 Forward transfer admittance - Ciss Input capacitance - Output capacitance Coss Reverse transfer capacitance - Crss td (on) Turn-on delay time - tr Rise time - td (off) Turn-off delay time - tf Fall time - Total gate charge - Qg Gate-source charge - Qgs Gate-drain charge - Qgd
Pulsed
Typ. - - - - 35 45 50 - 2150 250 150 13 30 90 105 17.0 5.2 5.5
Max. 10 - -1 -2.5 50 63 70 - - - - - - - - 25.5 - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS= 20V, VDS=0V ID= -1mA, VGS=0V VDS= -45V, VGS=0V VDS= -10V, ID= -1mA ID= -16A, VGS= -10V ID= -8A, VGS= -4.5V ID= -8A, VGS= -4.0V VDS= -10V, ID= -8A VDS= -10V VGS=0V f=1MHz ID= -10A VDD -25V VGS= -10V RL=2.5 RG=10 VDD -25V ID= -10A VGS= -5V RL=2.5 RG=10
Body diode characteristics (Source-drain) (Ta=25C)
Parameter Forward voltage
Pulsed
Symbol VSD
Min. -
Typ. -
Max. -1.2
Unit V
Conditions IS= -16A, VGS=0V
2/5
RSY160P05
Transistors
Electrical characteristic curves
16 14 DRAIN CURRENT : -ID[A] 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 -3.0V VGS= -2.5V 16 Ta=25C Pulsed DRAIN CURRENT : -ID[A] -10V -6.0V -4.5V -4.0V 14 12 10 8 6 4 2 0 0 2 4 6 8 10 -2.8V VGS= -2.5V -3.0V -10V -4.0V Ta=25C Pulsed DRAIN CURRENT : -ID[A] 100 VDS= -10V Pulsed 10 Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
1
0.1
0.01 1.0
2.0
3.0
4.0
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
1000 Ta=25C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 100
1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS= -10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C
1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS= -4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C
100
100
10 0.1 1 10 100
10 0.1 1 10 100
10 0.1 1 10 100
DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m]
1000 VGS= -4.0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C
100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] REVERSE DRAIN CURRENT : -Is [A] VDS= -10V Pulsed 10
100 VGS=0V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta=-25C
100
1
Ta= -25C Ta=25C Ta=75C Ta=125C
1
0.1
10 0.1 1 10 100
0 0.1 1 10 100
0.01 0 0.2 0.4 0.6 0.8 1 1.2
DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current
SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage
3/5
RSY160P05
Transistors
200 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] SWITCHING TIME : t [ns] 160 120 80 40 0 0 5 10 15 ID= -16A Ta=25C Pulsed 10000 Ta=25C VDD= -25V VGS= -10V RG=10 Pulsed 10 GATE-SOURCE VOLTAGE : -VGS [V] 8 6 4 2 0 0 5 10 15 20 25 30 Ta=25C VDD= -25V ID= -10A RG=10 Pulsed
1000
tf td(off)
100
10 tr 1 0.01 0.1 1 10 100 td(on)
ID= -8A
GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source
DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics
10000 Ciss CAPACITANCE : C [pF] 1000
100
Crss Coss Ta=25C f=1MHz VGS=0V 0.01 0.1 1 10 100
10
GATE-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage
4/5
RSY160P05
Transistors
Measurement circuits
Pulse Width
VGS
ID RL D.U.T.
VDS
VGS
10% 50% 10%
50% 90% 10% 90% td(off) toff tf
RG
VDD
VDS 90% td(on) ton tr
Fig.14 Switching Time Test Circuit
Fig.15 Switching Time Waveforms
VG
VGS
ID RL
VDS
VGS Qgs
Qg
IG (Const.) RG
D.U.T.
Qgd
VDD
Charge
Fig.16 Gate Charge Test Circuit
Fig.17 Gate Charge Waveform
5/5
Appendix
Notes
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Appendix1-Rev3.0

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